BU406, BU407
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
70
TCD124AA
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
50
TCD124AB
60
h
FE
- Typical DC Current Gain
50
h
FE
- Typical DC Current Gain
T
C
= 100°C
t
p
< 300 µs
d < 2%
V
CE
= 5 V
40
T
C
= 25°C
t
p
< 300 µs
d < 2%
40
T
C
= 25°C
30
30
20
20
10
10
T
C
= -55°C
0
0·1
V
CE
= 1 V
V
CE
= 5 V
V
CE
= 10 V
1·0
I
C
- Collector Current - A
10
0
0·1
1·0
I
C
- Collector Current - A
10
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·8
0·7
0·6
0·5
0·4
0·3
0·2
0·1
0
-60 -40 -20
I
C
= 4 A
I
B
= 0.5 A
TCD124AC
t
p
< 300 µs
d < 2%
I
C
= 8 A
I
B
= 2 A
0
20
40
60
80 100 120 140 160
T
C
- Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
UTC-IC [ UNISONIC TECHNOLOGIES ]
