BU406, BU407
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
=
30 mA
I
B
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
C
= 0
I
C
=
4A
(see Notes 2 and 3)
(see Notes 2 and 3)
(see Notes 2 and 3)
f = 1 MHz
f = 1 MHz
(see Note 4)
6
60
12
20
1
1.2
V
V
MHz
pF
T
C
= 150°C
T
C
= 150°C
BU406
BU407
BU406
BU407
BU406
BU407
TEST CONDITIONS
MIN
140
5
5
0.1
0.1
1
1
1
mA
mA
TYP
MAX
UNIT
V
V
CE
= 400 V
V
CE
= 330 V
I
CES
Collector-emitter
cut-off current
V
CE
= 250 V
V
CE
= 200 V
V
CE
= 250 V
V
CE
= 200 V
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
t
C
ob
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
V
EB
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CB
=
6V
10 V
10 V
0.5 A
0.5 A
5V
20 V
I
C
= 0.5 A
I
C
=
I
C
=
5A
5A
I
C
= 0.5 A
I
E
= 0
NOTES: 2. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain f
t
the [h
FE
] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1.
FE
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.08
70
UNIT
°C/W
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
t
s
t
(off)
†
TEST CONDITIONS
I
C
= 5 A
I
B(end)
= 0.5A
†
MIN
(see Figures 1 and 2)
TYP
2.7
MAX
750
UNIT
µs
ns
Storage time
Turn off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
UTC-IC [ UNISONIC TECHNOLOGIES ]
