BSS138
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
RATINGS
UNIT
50
V
±20
V
DC
0.22
Continuous Drain Current
I
D
A
Pulse
0.88
SOT-23-3
0.36
Power Dissipation
P
D
W
SOT-323
0.15
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-23-3
Junction to Ambient
SOT-323
SYMBOL
θ
JA
RATINGS
350
833
UNIT
℃
/W
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain–Source On–Resistance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
50
72
0.5
0.1
±100
0.8
1.3
-2
0.7
1.0
0.2
0.12
0.5
27
13
6
1.7
0.1
0.4
2.5
9
20
7
0.8
2.4
3.5
6.0
1.5
V
mV/℃
µA
nA
V
mV/°C
Ω
A
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
BV
DSS
V
GS
=0V, I
D
=250µA
ΔBV
DSS
/ΔT
J
I
D
=250μA,Referenced to 25°C
V
DS
=50V, V
GS
=0V
I
DSS
V
DS
=30V, V
GS
=0V
I
GSS
V
DS
=0V, V
GS
=±20V
V
GS(TH)
V
DS
=V
GS
, I
D
=1m A
ΔV
GS(TH)
/ΔT
J
I
D
=1mA, Referenced to 25°C
R
DS(ON)
V
GS
=10 V, I
D
=0.22A
V
GS
=4.5 V, I
D
=0.22A
V
GS
=10 V, V
DS
=5V
V
DS
=10V, I
D
=0.22A
On-State Drain Current
I
D(ON)
Forward Transconductance
g
FS
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note)
Total Gate Charge
Q
G
V
DS
=25V, V
GS
=10V, I
D
=0.22A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.29A,V
GS
=10V,
R
G
=6Ω,
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
=0.44A (Note)
Max. Diode Forward Current
I
S
Note: Pulse test, pulse width
≤
300us, duty cycle≤ 2%
5
18
36
14
1.4
0.22
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www.unisonic.com.tw
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