UNISONIC TECHNOLOGIES CO., LTD
BSS138
Preliminary
Power MOSFET
N-CHANNEL LOGIC LEVEL
ENHANCEMENT MODE
DESCRIPTION
This device employs advanced MOSFET technology and
features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the
overall efficiency of DC/DC converters and allows operation to higher
switching frequencies.
FEATURES
* R
DS(ON)
=0.7Ω @ V
GS
=10V
* R
DS(ON)
=1Ω @ V
GS
=4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BSS138L-AE2-R
BSS138G-AE2-R
BSS138L-AL3-R
BSS138G-AL3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-23-3
SOT-323
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
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