60N06
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
VGS = 0 V, IS = 60A
1.6
60
V
A
ISM
tRR
QRR
120
IS = 60A, VGS = 0 V,
dIF / dt = 100 A/µs
60
ns
3.4
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃
3. ISD≤60A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-121.A
www.unisonic.com.tw
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