60N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
60
±20
60
VGS
V
TC = 25℃
A
Continuous Drain Current
Drain Current Pulsed (Note 1)
Avalanche Energy
ID
TC = 100℃
39
A
IDM
EAS
EAR
PD
120
A
Single Pulsed (Note 2)
Repetitive (Note 1)
1000
180
mJ
mJ
W
℃
℃
Total Power Dissipation
Junction Temperature
Storage Temperature
120
TJ
+175
-55 ~ +175
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
62.5
1.25
UNIT
℃/W
℃/W
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJC
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
60
V
1
µA
nA
Forward
100
Gate-Source Leakage Current
IGSS
Reverse
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
2.0
4.0
18
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
14
mΩ
CISS
COSS
CRSS
2000
400
pF
pF
pF
VGS = 0V, VDS =25V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
115
tD(ON)
tR
tD(OFF)
tF
12
11
25
15
39
12
10
30
30
50
30
60
ns
ns
Rise Time
VDD=30V, ID=60A, RL=0.5Ω,
VGS=10V (Note 4, 5)
Turn-Off Delay Time
ns
Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS = 30V, VGS = 10 V
Gate-Source Charge
QGS
QGD
ID = 60A (Note 4, 5)
Gate-Drain Charge (Miller Charge)
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-121.A
www.unisonic.com.tw
UTC [ Unisonic Technologies ]
