50N06
TYPICAL CHARACTERISTICS
On-State Characteristics
V
GS
15V
10 V
10
2
8 V
7 V
6 V
5 .5V
5V
Bottorm : 4.5V
Top:
MOSFET
Transfer Characteristics
10
2
Drain Current, I
D
(A)
Drain Current, I
D
(A)
25
℃
10
1
4.5V
10
1
1 50
℃
Note:
1. V
DS
=50V
2. 250µs Pulse Test
10
0
2
4 5
6 7
8 9 10
3
Gate-Source Voltage, V
GS
(V)
10
0
10
-1
10
10
Drain-Source Voltage, V
DS
(V)
0
1
Drain-Source On-Resistance, R
DS(ON)
(mΩ)
On-Resistance Variation vs Drain Current
.
and Gate Voltage
2.5
2.0
1.5
1.0
0.5
V
GS
=10V
V
GS
=20V
Reverse Drain Current, I
SD
(A)
10
2
On State Current vs. Allowable Case
Temperature
150℃
10
1
25℃
*Note:
1. V
GS
=0V
2. 250µs Test
1.6
0.0
0 20 40 60 80 100 120 140160180 200
Drain Current, I
D
(A)
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage V
SD
(V)
,
Gate-to-Source Voltage, V
GS
(V)
3000
2500
Capacitance (pF)
Capacitance Characteristics
(Non-Repetitive)
C
ISS=
C
GS
+C
GD
(C
DS
=shorted)
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
C
ISS
*Note:
1. V
GS
=0V
2. f = 1MHz
Gate Charge Characteristics
12
10
8
6
4
2
0
0
*Note: I
D
=50A
5 10 15 20 25 30 35 40 45
Total Gate Charge, Q
G
(nC)
V
DS
=30V
2000
1500
1000
500
0
C
OSS
V
DS
=48V
C
RSS
15 20 25 30 35
10
5
Drain-Source Voltage, V
DC
(V)
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