50N06
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
V
SD
I
S
= 50A, V
GS
= 0 V
Continuous Source Current
I
S
Integral Reverse p-n Junction Diode in the
MOSFET
D
MOSFET
MIN
TYP
MAX
1.5
50
A
UNIT
V
Pulsed Source Current
I
SM
G
S
200
Reverse Recovery Time
t
RR
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/µs
Reverse Recovery Charge
Q
RR
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH, I
AS
=50A, V
DD
=25V, R
G
=0Ω, Starting T
J
=25℃
3. I
SD
≤50A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
54
81
ns
µC
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