50N06
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs Junction
.
Temperature
1.2
1.1
On-Resistance Variation vs
.
Junction Temperature
MOSFET
Drain-Source On-Resistance, R
DS(ON)
,
(Normalized)
Drain-Source Breakdown Voltage,
BV
DSS
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
*Note:
1. V
GS
=0V
2. I
D
=250µA
0
50
100
150 200
0.9
*Note:
1. V
GS
=10V
2. I
D
=25A
-50
0
50
100
150
Junction Temperature, T
J
(℃)
0.8
-100 -50
Junction Temperature, T
J
(℃)
Maximum Safe Operating
10 Operation in This
Area by R
DS (on)
Drain Current , I
D,
(A)
3
Maximum Drain Current vs. Case Temperature
50
Drain Current, I
D
(A)
10
2
100µs
1ms
10ms
10ms
40
30
20
10
0
10
1
*Note:
0
10 1. T =25℃
c
2. T
J
=150℃
-1
3. Single Pulse
10
1
0
1
2
10
10
10
10
Drain-Source Voltage, V
DS
(V)
25
50
75
100
125
150
Case Temperature, T
C
(℃)
Transient Thermal
Response Curve
Thermal Response, Z
θJC
(t)
10
0
D=0.5
0.2
0.1
0.05
-1
10
0.02
0.01
Single pulse
*Note:
1. Z
θJ
C
(t ) = 1.42℃/W Max.
2. Duty Factor , D=t1/ t2
3. T
J
-T
C
=P
DM
×Z
θJ
C
(t)
10
-5
0
10
1
10
10
-4
10
-3
10
-2
10
-1
10
Square Wave Pulse Duration t
1
(sec)
,
-2
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