50N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate to Source Voltage
±20
V
T
C
= 25℃
50
A
Continuous Drain Current
I
D
T
C
= 100℃
35
A
Drain Current Pulsed (Note 1)
I
DM
200
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
480
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7
V/ns
Total Power Dissipation (T
C
= 25℃)
130
W
P
D
0.9
W/℃
Derating Factor above 25℃
Operation Junction Temperature
T
J
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
62.5
MAX
1.15
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
T
C
= 25℃ unless otherwise specified
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
60
0.07
1
100
-100
2.0
18
900
430
80
40
100
90
80
30
9.6
10
4.0
23
1220
550
100
60
200
180
160
40
TYP
MAX
UNIT
V
V/℃
µA
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0 V, I
D
= 250 µA
I = 250 µA,
△
BV
DSS
/△T
J D
Referenced to 25℃
V
DS
= 60 V, V
GS
= 0 V
I
DSS
V
DS
= 48 V, T
C
= 125℃
V
GS
= 20V, V
DS
= 0 V
I
GSS
V
GS
= -20V, V
DS
= 0 V
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
V
DD
= 30V, I
D
=25 A,
R
G
= 50Ω (Note 4, 5)
V
DS
= 48V, V
GS
= 10 V
I
D
= 50A, (Note 4, 5)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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