2N7002
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source Current, I
D
(A)
Normalized Drain-Source
ON-Resistance, R
DS (ON)
(Ω)
On-Resistance Varisation with Temperature
2
Normalized Drain-Source
ON- Resistance, R
DS(ON)
(Ω)
1.75
1.5
1.25
1
0.75
0.5
-50
- 25
0
25
50
75
100 125 150
Junction Temperature, T
J
(°C)
Transfer Characteristics
2
V
DS
=10V
25℃
1.1
125℃
Normalized Gate-Source Threshold
Voltage, V
GS(TH)
(V)
1.05
1
0.95
0.9
0.85
0.8
0
2
4
6
8
10
-50
On-Resistance Varisation with Drain
Current and Temperature
3
Normalized Drain-Source ON-
Resistance, R
DS (ON)
(Ω)
V
GS
=10V
T
J
=125℃
V
GS
=10V
I
D
=500mA
2.5
2
1.5
25℃
1
0.5
0
0
0.4
0.8
1.2
1.6
2
Drain Current,I
D
(A)
Gate Threshold Varisation with Temperature
V
GS
= V
DS
I
D
= 1mA
1.6
Drain Current, I
D
(A)
1. 8
1.2
0.4
0
Gate to Source Voltage, V
GS
(V)
-25
0
25
50
75
100 125 150
Junction Temperature, T
J
(°C)
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