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2N7002 参数 Datasheet PDF下载

2N7002图片预览
型号: 2N7002
PDF下载: 下载PDF文件 查看货源
内容描述: 0.3安培, 60伏特N沟道功率MOSFET [0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 6 页 / 286 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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2N7002
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C unless otherwise noted.)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (R
GS
≤1MΩ)
Gate Source Voltage
Drain Current
Power Dissipation
Derated Above 25°C
Junction Temperature
Storage Temperature
Continuous
Non Repetitive(tp<50μs)
Continuous
Pulsed
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
T
STG
Power MOSFET
RATINGS
60
60
±20
±40
300
800
200
1.6
+ 150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/°C
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
625
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
Drain-Source On-Voltage
On-State Drain Current
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(TH)
V
DS (ON)
I
D(ON)
R
DS (ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
V
GS
=0V, I
D
=10μA
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
= V
DS
, I
D
=250μA
V
GS
= 10V, I
D
=500mA
V
GS
= 5.0V, I
D
=50mA
V
GS
=10V,V
DS
≥2V
DS(ON)
V
GS
=10V, I
D
=500mA
V
GS
=5.0V, I
D
=50mA
V
DS
=25V,V
GS
=0V,f=1.0MHz
MIN
60
1
100
-100
1
2.1
0.6
0.09
2700
2.5
3.75
1.5
7.5
7.5
20
11
4
50
25
5
20
TYP
MAX UNIT
V
μA
nA
nA
V
V
mA
pF
pF
pF
nS
500
V
DD
=30V, R
L
=150Ω
I
D
=200mA, V
GS
=10V
Turn-On Time
t
ON
R
GEN
=25Ω
V
DD
=30V, R
L
=25Ω
I
D
=200mA, V
GS
=10V
Turn-Off Time
t
OFF
R
GEN
=25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, Is=115mA (Note )
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Maximum Continuous Drain-Source
Is
Diode Forward Current
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
20
nS
0.88
1.5
0.8
115
V
A
mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R206-037,I