1N60A
TYPICAL PERFORMANCE CHARACTERISTICS
Output Characteristics
V
GS
15.0V
10 .0V
8 .0V
7 .0V
10
0
6 .0V
5.5V
5V
Bottorm :4.5V
Top:
Power MOSFET
Transfer Characteristics
V
DS
=50V
250μs Pulse Test
Drain Current, I
D
(A)
4.5V
Drain Current, I
D
(A)
10
0
150℃
25℃
10
-1
10
0
250μs Pulse Test
T
C
=25℃
10
1
10
-1
2
4
6
8
10
Drain-Source Voltage, V
DS
(V)
Gate-Source Voltage, V
GS
(V)
On-Resistance vs. Drain Current
Source- Drain Diode Forward Voltage
Drain-Source On-Resistance, R
DS(ON)
(Ω)
30
25
20
15
10
5
0
V
GS
=10V
V
GS
=20V
Reverse Drain Current, I
DR
(A)
T
J
=25℃
V
GS
=0V
250μs Pulse Test
10
0
150℃
25℃
0.0
0.5
1.0
1.5
2.0
2.5
10
-1
0.2 0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain Current, I
D
(A)
Source-Drain Voltage V
SD
(V)
,
Capacitance vs. Drain-Source Voltage
200
C
ISS
C
OSS
100
C
ISS=
C
GS
+C
GD
(C
DS
=shorted)
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
Gate Charge vs. Gate-Source Voltage
12
Gate-Source Voltage, V
GS
(V)
10
8
6
4
2
0
0
V
DS
=480V
V
DS
=300V
V
DS
=120V
Capacitance (pF)
150
50
V
GS
=0V
f = 1MHz
C
RSS
0
10
-1
I
D
=1.0A
2
4
6
8
10
10
0
10
1
Drain-SourceVoltage, V
DS
(V)
Total Gate Charge, Q
G
(nC)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-091,B
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