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1N60A 参数 Datasheet PDF下载

1N60A图片预览
型号: 1N60A
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5安培, 600伏特N沟道MOSFET [0.5 Amps, 600 Volts N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 8 页 / 140 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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1N60A
ABSOLUTE MAXIMUM RATINGS(
T
C
= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
600
V
Gate-Source Voltage
±30
V
T
C
= 25℃
0.5
Continuous Drain Current
I
D
A
T
C
= 100℃
0.4
Drain Current-Pulsed (Note 2)
I
DP
2
A
Repetitive(Note 1)
E
AR
3.6
4.0
mJ
Avalanche Energy
50
mJ
Single Pulse(Note 2)
E
AS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
T
C
=25℃
3
W
Total Power Dissipation
P
D
Derate above 25°C
25
mW/℃
Operation Junction Temperature
T
J
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Case-Sink
SYMBOL
θ
JA
θ
CS
MIN
TYP
0.5
MAX
120
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, Unless Otherwise Specified.)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
MIN
600
0.4
1
10
-10
2.0
11
4.0
15
100
20
3
12
11
40
18
8
1.8
4.0
34
32
90
46
10
TYP
MAX
UNIT
V
V/℃
µA
µA
µA
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
BV
DSS
V
GS
= 0V, I
D
= 250µA
△BV
DSS
/
I
D
= 250µA, referenced to 25℃
T
J
V
DS
= 600V, V
GS
= 0V
I
DSS
V
DS
= 480V, T
C
= 125℃
V
GS
= 20V, V
DS
= 0V
I
GSS
V
GS
= -20V, V
DS
= 0V
V
GS(TH)
V
DS
= V
GS
, I
D
= 250µA
R
DS(ON)
V
GS
= 10V, I
D
= 0.5A
C
ISS
C
OSS
C
RSS
t
D (ON)
t
R
t
D (OFF)
t
F
Q
G
Q
GS
Q
GD
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=25V, V
GS
=0V, f=1MHz
V
DD
=300V, I
D
=0.5A, R
G
=5Ω
(Note 4,5)
V
DS
=480V, V
GS
=10V, I
D
=0.8A
(Note 4,5)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-091,B