1N60A
TYPICAL CHARACTERISTICS (Cont.)
Breakdown Voltage vs. Temperature
Drain-Source Breakdown Voltage, BV
DSS,
(Normalized)
1.2
Drain-Source On-Resistance, R
DS(ON)
(Normalized)
V
GS
=0V
I
D
=250μA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
0
100 150
-50
50
Junction Temperature, T
J
(°C)
200
-100
Power MOSFET
On-Resistance vs. Temperature
V
GS
=10V
I
D
=0.5A
1.1
1.0
0.9
0.8
-50
50
100 150
0
Junction Temperature, T
J
(°C)
200
Max. Safe Operating Area
Operation in This
Area is Limited by
R
DS(on)
Drain Current, I
D
(A)
100μs
10
0
Max. Drain Current vs. Case Temperature
1.0
10
1
Drain Current, I
D
(A)
1ms
10ms
0.5
10
-1
T
c
=25°C
T
J
=150°C
Single Pulse
10
0
10
1
10
2
Drain-Source Voltage, V
DS
(V)
Thermal Response
10
3
10
-2
0.0
25
50
125
100
75
Case Temperature, T
C
(°C)
150
Thermal Response,
θ
JC
(t)
0.5
10
0
0.2
0.1
0.0
5
θ
JC
(t) = 3.45°C/W Max.
Duty Factor, D=t1/t2
T
JM
-T
C
=P
DM
×θ
JC
(t)
10
-1
2
0.0
1
0.0
Single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration, t
1
(sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-091,E
UTC-IC [ UNISONIC TECHNOLOGIES ]
