1N60A
TYPICAL CHARACTERISTICS
Output Characteristics
V
GS
15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5V
Bottorm:4.5V
Top:
Power MOSFET
Transfer Characteristics
V
DS
=50V
250μs Pulse Test
10
0
Drain Current, I
D
(A)
4.5V
Drain Current, I
D
(A)
10
0
10
-1
10
0
250μs Pulse Test
T
C
=25°C
10
1
10
-1
2
4
6
8
Gate-Source Voltage, V
GS
(V)
Source- Drain Diode Forward Voltage
V
GS
=0V
250μs Pulse Test
10
Drain-Source Voltage, V
DS
(V)
On-Resistance vs. Drain Current
T
J
=25°C
Reverse Drain Current, I
DR
(A)
Drain-Source On-Resistance, R
DS(ON)
(Ω)
30
25
20
15
10
5
0
V
GS
=10V
V
GS
=20V
10
0
10
-1
0.0
0.5
1.5
1.0
Drain Current, I
D
(A)
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Voltage, V
SD
(V)
1.6
200
Capacitance vs. Drain-Source Voltage
C
ISS=
C
GS
+C
GD
(C
DS
=shorted)
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
12
Gate-Source Voltage, V
GS
(V)
10
8
6
4
2
0
Gate Charge vs. Gate-Source Voltage
V
DS
=480V
V
DS
=300V
V
DS
=120V
150
Capacitance (pF)
C
ISS
C
OSS
100
50
V
GS
=0V
f = 1MHz
10
-1
C
RSS
0
I
D
=1.0A
0
2
6
4
8
Total Gate Charge, Q
G
(nC)
10
10
0
10
1
Drain-SourceVoltage, V
DS
(V)
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