1N60A
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°C, unless otherwise specified.)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Continuous Drain Current
I
D
0.5
A
Pulsed Drain Current (Note 2)
I
DM
2
A
Single Pulse(Note 3)
E
AS
50
mJ
Avalanche Energy
Repetitive(Note 2)
E
AR
3.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
6.25
SOT-223
W
Power Dissipation (T
C
=25°C) TO-251/TO-252
34
TO-92
3
P
D
SOT-223
0.05
Derate above 25°C
TO-251/TO-252
0.27
W/°C
TO-92
0.025
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, I
AS
=0.8A, V
DD
=50V, R
G
=0Ω, Starting T
J
=25°C
4. I
SD
≤1.0A,
di/dt≤100A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
150
110
160
20
5
80
UNIT
°C/W
PARAMETER
SOT-223
Junction to Ambient
TO-251/TO-252
TO-92
SOT-223
Junction to Case
TO-251/TO-252
TO-92
θ
JC
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-091.K
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