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1N60AG-AA3-R 参数 Datasheet PDF下载

1N60AG-AA3-R图片预览
型号: 1N60AG-AA3-R
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor]
分类和应用:
文件页数/大小: 7 页 / 240 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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UNISONIC TECHNOLOGIES CO., LTD
1N60A
0.5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
1N60A
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
<15Ω@V
GS
= 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (C
RSS
= 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
Ordering Number
Package
Lead Free
Halogen Free
1N60AL-AA3-R
1N60AG-AA3-R
SOT-223
1N60AL-TM3-T
1N60AG-TM3-T
TO-251
1N60AL-TN3-R
1N60AG-TN3-R
TO-252
1N60AL-T92-B
1N60AG-T92-B
TO-92
1N60AL-T92-K
1N60AG-T92-K
TO-92
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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