1N60
TYPICAL PERFORMANCE CHARACTERISTICS(cont.)
Breakdown Voltage vs. Temperature
Drain-Source Breakdown Voltage,
BV
DSS,
(Normalized)
Power MOSFET
On-Resistance vs. Temperature
3.0
Drain-Source On-Resistance,
R
DS(ON)
(Normalized)
1.2 V =0V
GS
I
D
=250μA
1.1
2.5
2.0
1.5
1.0
0.5
V
GS
=10V
I
D
=0.6A
1.0
0.9
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
Junction Temperature, T
J
(℃)
Junction Temperature, T
J
(℃)
Max. Safe Operating Area
Operation in This Area
is Limited by R
DS(on)
1.2
Max. Drain Current vs. Case Temperature
10
1
Drain Current, I
D
(A)
3
Drain Current, I
D
(A)
10
0
100μs
1ms
10ms
DC
0.9
0.6
10
-1
10
-2
T
c
=25℃
T
J
=150℃
Single Pulse
10
0
0.3
10
1
10
2
10
0.0
25
50
75
100
125
150
Drain-Source Voltage, V
DS
(V)
Case Temperature, T
C
(℃)
Thermal Response
Thermal Response,
θ
JC
(t)
D=0.5
10
0
0.2
0.1
-1
10
0
0
.0 1
0 .0
.02
5
θ
JC
(t) = 3.13℃/W Max.
Duty Factor, D=t1/t2
T
JM
-T
C
=P
DM
×θ
JC
(t)
P
DM
Single pulse
10
-4
t1
t2
-2
-1
10
-5
10
-3
10
10
10
0
10
1
Square Wave Pulse Duration t
1
(sec)
,
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