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1N60-TF3-T 参数 Datasheet PDF下载

1N60-TF3-T图片预览
型号: 1N60-TF3-T
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2安培, 600伏特N沟道MOSFET [1.2 Amps, 600 Volts N-CHANNEL MOSFET]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 144 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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1N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
600
V
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
1.2
A
T
C
= 25℃
1.2
Continuous Drain Current
A
I
D
T
C
= 100℃
0.76
Drain Current-Pulsed (Note 2)
I
DP
4.8
A
Repetitive(Note 2)
E
AR
4.0
mJ
Avalanche Energy
Single Pulse(Note 3)
E
AS
50
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
T
C
=25℃
40
W
Total Power Dissipation
P
D
Derate above 25°C
0.32
W/℃
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=64mH, I
AS
=1.2A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤1.2A,
di/dt
200A/µs, V
DD
BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
TO-251
TO-252
TO-220
TO-251
TO-252
TO-220
SYMBOL
θ
JA
RATINGS
112
112
54
12
12
4
UNIT
℃/W
Thermal Resistance Junction-Case
θ
Jc
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified.)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250Μa
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125℃
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
MIN
600
10
100
100
-100
0.4
2.0
9.3
0.9
120
20
3.0
4.0
11.5
TYP
MAX
UNIT
V
Μa
Μa
Na
V/℃
V
S
Pf
Pf
Pf
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
△BV
DSS
/
I
D
= 250Μa
T
J
V
GS(TH)
V
DS
= V
GS
, I
D
= 250Μa
R
DS(ON)
V
GS
= 10V, I
D
= 0.6A
g
FS
V
DS
= 50V, I
D
= 0.6A (Note 1)
C
ISS
C
OSS
C
RSS
V
DS
=25V, V
GS
=0V, f=1MHz
150
25
4.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-052,D