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13N50 参数 Datasheet PDF下载

13N50图片预览
型号: 13N50
PDF下载: 下载PDF文件 查看货源
内容描述: 500V N沟道MOSFET [500V N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 6 页 / 163 K
品牌: UTC [ Unisonic Technologies ]
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13N50  
Preliminary  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source  
Diode Forward Current  
VSD  
IS  
VGS = 0V, IS = 13 A  
1.4  
13  
V
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
52  
A
Reverse Recovery Time  
tRR  
VGS = 0V, IS = 13A,  
dIF / dt = 100A/μs (Note 1)  
410  
4.5  
nS  
Reverse Recovery Charge  
QRR  
μC  
Notes: 1. Pulse Test : Pulse width300μs, Duty cycle2%  
2. Essentially independent of operating ambient temperature  
UNISONIC TECHNOLOGIES CO., LTD  
www.unisonic.com.tw  
3 of 6  
QW-R502-362.a  
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