13N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous Drain Current
13
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
52
A
IAR
13
A
EAS
860
mJ
mJ
V/ns
W
EAR
19.5
4.5
dv/dt
TO-220
TO-220F
195
Power Dissipation (TC=25°C)
PD
48
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 6.0, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220
TO-220F
TO-220
TO-220F
Junction to Ambient
Junction to Case
θJA
62.5
0.64
θJC
2.58
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ID = 250μA
500
V
1
μA
nA
100
Gate-Source Leakage Current
IGSS
-100 nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
0.5
V/°C
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
0.39 0.48
V
VGS = 10V, ID = 6.5A
Ω
CISS
COSS
CRSS
1580 2055 pF
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
180 235
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
20
25
tD(ON)
tR
tD(OFF)
tF
25
60
nS
nS
nS
nS
nC
nC
nC
Turn-On Rise Time
VDD =250V, ID =13A
RG =25Ω (Note 1,2)
100 210
130 270
100 210
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
43
7.5
56
VDS=400V, ID=13A, VGS=10 V
(Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
18.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-362.a
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