12N65
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250 µA
650
V
Drain-Source Leakage Current
I
DSS
V
DS
= 650 V, V
GS
= 0 V
1
µA
Gate-Source Leakage Current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
±100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250µA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 6.0A
0.65 0.85
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1480 1900 pF
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
200 270 pF
f = 1MHz
25
35
pF
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
42
54
nC
V
DS
= 520V,I
D
= 12A,
Gate-Source Charge
Q
GS
8.6
nC
V
GS
= 10 V (Note 1, 2)
21
nC
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D(ON)
30
70
ns
V
DD
= 325V, I
D
= 12A,
Turn-On Rise Time
t
R
115 240 ns
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
95 200 ns
Turn-Off Fall Time
t
F
85 180 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
12
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
48
A
Forward Current
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 12A
1.4
V
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 12A,
380
ns
dI
F
/dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
3.5
µC
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-583.D
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