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12N65G-TF2-T 参数 Datasheet PDF下载

12N65G-TF2-T图片预览
型号: 12N65G-TF2-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor,]
分类和应用:
文件页数/大小: 8 页 / 412 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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12N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
12
A
Continuous
I
D
12
A
Drain Current
48
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
790
mJ
Avalanche Energy
24
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220 / TO-262
225
W
TO-263
Power Dissipation
P
D
TO-220F / TO-220F1
51
W
TO-220F2
54
W
TO-3P
260
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 10mH, I
AS
= 12A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
12A, di/dt
≤200A/s,
V
DD
≤BV
DSS
Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATING
62.5
40
0.56
θ
JC
2.43
2.31
0.48
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-262 / TO-263
TO-3P
TO-220 / TO-262
TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-3P
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-583.D