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12N60-B-TF3-T 参数 Datasheet PDF下载

12N60-B-TF3-T图片预览
型号: 12N60-B-TF3-T
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor]
分类和应用:
文件页数/大小: 7 页 / 333 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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12N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 12A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, I
S
= 12A,
Reverse Recovery Time
t
RR
dI
F
/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300μs,
Duty cycle
2%
2. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
1.4
12
48
380
3.5
V
A
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-170.D