12N60-B-TF3-T 参数 Datasheet PDF下载

12N60

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C, unless otherwise specified)

Power MOSFET

PARAMETER

SYMBOL

RATINGS

UNIT

12N60-A

600

V

Drain-Source Voltage

V

DSS

12N60-B

650

V

Gate-Source Voltage

V

GSS

±30

V

Avalanche Current (Note 2)

I

AR

12

A

Continuous

I

D

12

A

Drain Current

Pulsed (Note 2)

I

DM

48

A

Single Pulsed (Note 3)

E

AS

790

mJ

Avalanche Energy

24

mJ

Repetitive (Note 2)

E

AR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

225

°C/W

Power Dissipation

P

D

TO-220F/TO-220F1

51

°C/W

Junction Temperature

T

J

+150

°C

Operating Temperature

T

OPR

-55 ~ +150

°C

Storage Temperature

T

STG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 10mH, I

AS

= 12A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

I

SD

≤

12A, di/dt

≤200A/s,

V

DD

≤BV

DSS

Starting T

J

= 25°C

THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-220F/TO-220F1

SYMBOL

12N60-A

12N60-B

BV

DSS

I

DSS

I

GSS

SYMBOL

θ

JA

θ

JC

RATING

62.5

0.56

2.43

UNIT

°C/W

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

(T

C

=25°C, unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

TEST CONDITIONS

V

GS

= 0 V, I

D

= 250 µA

V

DS

= 600 V, V

GS

= 0 V

V

GS

= ±30 V, V

DS

= 0 V

0.7

2.0

0.55

4.0

0.8

MIN TYP MAX UNIT

600

650

1

±100

V

V

µA

nA

V/°C

V

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

Drain-Source Leakage Current

Gate-Source Leakage Current

Breakdown Voltage Temperature

Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

△

BV

DSS

/△T

J

I

D

= 250 µA, Referenced to 25°C

V

GS(TH)

R

DS(ON)

C

ISS

C

OSS

C

RSS

t

D(ON)

t

R

t

D(OFF)

t

F

Q

G

Q

GS

Q

GD

V

DS

= V

GS

, I

D

= 250μA

V

GS

= 10V, I

D

= 6.0A

V

DS

= 25 V, V

GS

= 0 V, f = 1MHz

1480 1900

200 270

25

35

30

115

95

85

42

8.6

21

70

240

200

180

54

V

DD

= 300V, I

D

= 12A, R

G

= 25Ω

(Note 4, 5)

V

DS

= 480V,I

D

= 12A, V

GS

= 10 V

(Note 4, 5)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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