10N80
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
10
8
6
5
4
3
Power MOSFET
Drain-Source On-State
Resistance Characteristics
V
GS
=10V,
I
D
=5A
4
2
0
0
2
1
0
200
800
Source to Drain Voltage,V
SD
(mV)
400
600
1000
0
1
2
3
4
5
Drain to Source Voltage, V
DS
(V)
Drain Current vs. Drain-Source
Breakdown Voltage
400
350
300
250
200
150
100
50
Drain Current vs. Gate Threshold Voltage
3
2.5
2
1.5
1
0.5
0
0
1
2
3
Gate Threshold Voltage,V
TH
(V)
4
0
0
600
800
1000
Drain-Source Breakdown Voltage,BV
DSS
(V)
200
400
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www.unisonic.com.tw
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