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10N80 参数 Datasheet PDF下载

10N80图片预览
型号: 10N80
PDF下载: 下载PDF文件 查看货源
内容描述: 800V N沟道功率MOSFET [800V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 194 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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10N80
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=10.0 A,V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, dI
F
/dt = 100 A/µs,
Reverse Recovery Time
t
RR
I
S
= 10.0 A (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
300µs, Duty Cycle
2%.
2. Independent of operating temperature.
Power MOSFET
MIN
TYP
MAX UNIT
1.4
10.0
A
40.0
730
10.9
ns
nC
V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-218.D