10N80
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BV
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
800
10
100
±100
980
3.0
0.9
5.0
1.1
V
µA
nA
V/°С
V
Ω
pF
pF
pF
V
GS
=0 V, I
D
=250 µA
V
DS
=800V, V
GS
=0 V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Gate-Body Leakage Current
I
GSS
V
DS
=0 V, V
GS
= ±30 V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5.0A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=10.0A,
R
G
=25Ω (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V,
Gate Source Charge
Q
GS
I
D
=10.0A (Note 1,2)
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=10.0 A,V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, dI
F
/dt = 100 A/µs,
I
S
= 10.0A (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. Independent of operating temperature.
2150 2800
180 230
15
20
50
130
90
80
45
13.5
17
110
270
190
170
58
ns
nC
1.4
10.0
V
A
40.0
730
10.9
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-218.F
UTC-IC [ UNISONIC TECHNOLOGIES ]
