UNISONIC TECHNOLOGIES CO., LTD
10N80
10A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
10N80
uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent R
DS(ON)
, low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
= 1.1Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 45nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 15pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N80L-T3P-T
10N80G-T3P-T
10N80L-TF1-T
10N80G-TF1-T
10N80L-TF2-T
10N80G-TF2-T
Package
TO-3P
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-218.F
UTC-IC [ UNISONIC TECHNOLOGIES ]
