10N75
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
750
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250μA,Referenced to 25°C
V
DS
=750V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
2.0
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=5.0A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=600V, V
GS
=10V, I
D
=10A
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=350V, I
D
=10A, R
G
=25Ω
V
DS
=10V (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=10.0A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=10.0A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
TYP
MAX
UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
0.98
10
100
100
-100
4.0
1.3
0.93
5.8
2150 2800
180
230
15
20
45
13.5
17
50
130
90
80
58
110
270
190
170
10.0
40.0
1.4
730
10.9
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-501.b
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