10N75
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
750
V
Gate-Source Voltage
V
GSS
±30
V
10
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
40
A
Avalanche Current (Note 2)
I
AR
10
A
920
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220
156
W
Power Dissipation
P
D
TO-220F/TO-220F1
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: 1.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=17.3mH, I
AS
=10A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤10A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F1
TO-220
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-501.b
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