CHX2193
Electrical Characteristics
7.5-15GHz Frequency Multiplier
T
amb
= +25°C, V
g1
= -0.9V V
g2
adjusted for I
d
= 60mA under RF P
in
=+12dBm
Symbol
F
in
F
out
P
in
P
out
I
s
/F
o
VSWR
in
VSWR
out
V
d
I
d
Parameter
Input frequency range
Output frequency range
Input power
Output power for +12 dBm input power
F
in
level at the output ( 6.25 < F
in
< 8.25GHz ), for
+12dBm input power
Input VSWR
Output VSWR
Drain bias voltage
Bias current (with RF)
Min
6.25
12.5
Typ
Max
8.25
16.5
Unit
GHz
GHz
dBm
12
10
-8
12
-16
2.5:1
2.5:1
3.5
60
16
-30
dBm
dBm
V
mA
A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb = +25°C
Symbol
V
d
I
d
T
a
T
stg
Drain bias voltage
Drain bias current
Operating temperature range (1)
Storage temperature range
Parameter
Values
4.0
150
-40 to +85
-55 to +125
Unit
V
mA
°C
°C
Operation of device above anyone of these parameters may cause permanent damage.
(1) Reference : backside of the chip
Ref. : DSCHX21936159 - 08 Jun 06
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
