CHU3377
Electrical Characteristics
W-band Multiplier/MPA
Full operating temperature range, used according to section “Typical assembly and bias configuration”
Symbol
F_in
F_out
P_in
VSWR_in
P_out
VSWR_out
Input frequency
Parameter (1)
Min
12.67
76
0
12
Typ
Max
12.83
77
Unit
GHz
GHz
dBm
dBm
Output frequency
Input power at IN port
IN port VSWR on 50Ω load
Output power at OUT port on load VSWR
≤1.5:1
OUT port VSWR on 50Ω load
Amplitude noise @ 1kHz (SSB)
@ 10kHz (SSB)
4
1.5:1
15
1.5:1
-135
-142
-151
-153
≤
-155
-50
-35
8
2.5:1
17
2.5:1
-125
-137
-144
-146
-150
-40
-25
-50
An
@ 100kHz (SSB)
@ 200kHz (SSB)
≥
1MHz (SSB)
Harmonics output power (@ k*6.375 GHz)
dBc/Hz
Hn_p
NHn_p
+V
+I
-V
-I
Top
@ 6.375 GHz to 51 GHz
@ 57.375 GHz to 102 GHz
Non harmonics output power
Positive supply voltage
Positive supply current
Negative supply voltage
Negative supply current
Operating temperature range (2)
-40
-4.7
+4.4
dBm
dBm
V
mA
V
mA
°
C
+4.5
210
-4.5
11
+4.6
275
-4.3
18
+125
(1) All the parameters are given in the following conditions:
- OUT Port: 50Ω reference plan at
≤200µm
(≤0.15nH) bonding length from OUT pad.
(2) Chip backside metal temperature.
Absolute Maximum Ratings
(2)
Symbol
P_in
+V
-V
+I
-I
Tstg
Parameter
Input power
Positive supply voltage
Negative supply voltage
Positive supply current
Negative supply current
Storage temperature range
Values
9
+5
-5
325
25
-55 to +150
Unit
dBm
V
V
mA
mA
°
C
(2) Operation of this device above anyone of these parameters may cause permanent damage.
CAUTION:
Positive supply voltage must not be applied without negative supply voltage.
ESD Protections: Electrostatic discharge sensitive device observe handling
precautions!
Ref.: DSCHU33777082 - 23 Mar 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
