CHT3091aQAG
Main Characteristics
Tamb. = 25°
C
Symbol
Fin
Min Att.
Max Att.
VSWRin
Pin1dB
Parameter
Input frequency range
Minimum attenuation |S21| (VS=0V;VP=-5V)
Maximum attenuation |S21| (VS=-5V;VP=0V)
Input VSWR (any attenuation)
Input 1dB compression point.(any
attenuation)
DC-12GHz Attenuator
Min
DC
Typ
3.0
Max
12
4.0
Unit
GHz
dB
dB
20
23
2.:1
2.:1
VSWRout Output VSWR (any attenuation)
14
15
dBm
These values are representative of onboard measurements as defined in the application
section.
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Absolute Maximum Ratings
Tamb. = 25°
C
Symbol
VP
VS
Pin
Ta
Tstg
(1)
Parameter
VP control voltage
VS control voltage
RF input power
Operating temperature range
Storage temperature range
Values
-6V to +0.6V
-6V to +0.6V
20
-40 to +85
-55 to +155
Unit
V
V
dBm
°
C
°
C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
For an ambient Temperature of +25°
C
Symbol
Vs
Vp
Pin No.
6
7
VS control voltage
VP control voltage
Parameter
Values
-5 to 0
0 to –5
Unit
V
V
All other pins are not used for this device (but RFin: pin 2 and RFout: pin 11).
Ref. : DSCHT3091aQAG0211 - 30 Jul 2010
2/6
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
