CHR3663-QEG
Device thermal performances
17–24GHz Down Converter
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode
considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified in order to guarantee the nominal
device life time (MTTF) (see the curve Pdiss. Max).
DEVICE THERMAL SPECIFICATION : CHR3663-QEG
Recommanded max. junction temperature (Tj max)
:
143
Junction temperature absolute maximum rating
:
175
Max. continuous dissipated power @ Tcase=
85 °C :
1,71
(1)
=> Pdiss derating above Tcase =
85 °C :
29
(2)
Junction-Case thermal resistance (Rth J-C)
:
<34
(3)
Min. package back side operating temperature
:
-40
(3)
Max. package back side operating temperature
:
85
Min. storage temperature
:
-55
Max. storage temperature
:
125
(1) Derating at junction temperature constant = Tj max
(2) Rth J-C is calculated for a worst case where the
hotter junction
of the MMIC is considered.
°C
°C
W
mW/°C
°C/W
°C
°C
°C
°C
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
1,8
1,6
1,4
Pdiss. Max. (W)
Tcase
1,2
1
0,8
0,6
0,4
Pdiss. Max. (W)
0,2
0
-50
-25
0
25
50
75
100
125
Tcase (°C)
Example of QFN 16L 3x3
back-side view, temperature
reference point (Tcase) location.
5.6
Ref. : DSCHR3663-QEG1192 - 11 Jul 11
4/18
Specifications subject to change without notice
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
