17-20GHz Mfc Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
F
RF
F
LO
F
IF
P
LO
G
c
NF
Img Sup
P1dB
CHR2292
Parameter
RF frequency range
LO frequency range
IF frequency range
LO Input power
Conversion gain (1)
Noise Figure (1)
Image Suppression (1)
RF Input power at 1dB gain compression (1)
Min
17
7.5
0.25
Typ
Max
20
10
1.5
Unit
GHz
GHz
GHz
dBm
dB
dB
dBc
dBm
+10
13
4.0
15
-10
1.5:1
2.5:1
110
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
mA
(1) On Wafer measurements without bonding wires at the RF ports.
(2) Current source biasing network is recommended. Optimum performances for Idm=50mA and
Idl=60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Values
4.0
200
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHR22921201 -20-July-01
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
