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CHR2292-99F/00 参数 Datasheet PDF下载

CHR2292-99F/00图片预览
型号: CHR2292-99F/00
PDF下载: 下载PDF文件 查看货源
内容描述: 17-20GHz集成下变频器 [17-20GHz Integrated Down Converter]
分类和应用:
文件页数/大小: 6 页 / 127 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHR2292
17-20GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
The CHR2292 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
LO
Q
GM
GB
VDM
VDL
GX
VGA
RF
20
I
Main Features
Conversion Gain & Image suppression (dB)
16
12
8
4
0
-4
-8
-12
-16
-20
12
14
Broadband performances : 17-20GHz
13dB conversion gain
4.0dB noise figure
10dBm LO input power
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, 110mA@3.5V
Chip size : 2.49 X 2.13 X 0.10 mm
Gc_channel_inf_rf-
Gc_channel_inf_rf+
16
18
Gc_channel_sup_rf-
Gc_channel_sup_rf+
20
22
24
2*LO Frequency (GHz)
Conversion Gain for F_IF=1GHz (on wafer meas.)
P_LO=+10dBm / P_RF= -20dBm
Main Characteristics
Tamb. = 25°C
Parameter
Min
Typ
Max
Unit
F
RF
F
LO
F
IF
G
c
RF frequency range
LO frequency range
IF frequency range
Conversion gain
17
7.5
0.25
13
20
10
1.5
GHz
GHz
GHz
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22921201 -20-July-01
1/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09