CHR0100a
Electrical Characteristics
Tamb = +25°C
Symbol
Fop
BWif
Cg
NF
Pif_1dB
Plo
∆ϕ
∆Cg
Vd
Id
Parameter
Operating frequency range
IF frequency band
Conversion gain, RF to I or RF to Q
5.8GHz Image rejection mixer
Test
conditions
Min.
5.725
DC
Typ.
5.8
Max.
5.875
50
Unit
GHz
MHz
dB
dB
dBm
dBm
(1)
-4
-2.5
5
-5
Noise figure (DSB), RF to I or RF to Q
IF=10MHz
I or Q IF output power at 1dB
compression gain
LO input power
I/Q phase unbalance
I/Q amplitude unbalance
Positive bias voltage
Bias current
5
8
10
0.5
4
15
25
15
1.0
°
dB
V
mA
(1) Conversion gain will be 3dB higher after I/Q combination.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Vd
Vg
Pin
Top
Tstg
Parameter
Positive supply voltage
Negative supply voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
6
-2 to 0
10
-50 to 70
-55 to 155
Unit
V
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s.
Ref. : DSCHR01000161 -9-Jun-00
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
