CHP4511
Electrical Characteristics
6-18GHz Phase-shifter
Low level control voltage = -5V, High level control voltage = 0V
Pin = 5 dBm on the input, output on SPDT 1 or 2
Parameter
Fop
Operating frequency range
Phrange Phase shifter range
Phstep
S11
S22
S22off
IL
ISO
AV
Pio1dB
Poi1dB
Phase step
Input reflection coefficient
Output reflection coefficient
Output reflection coefficient path
OFF
Insertion loss
Isolation between Output 1 and 2
Amplitude variation
Output Power @1dB compression
Output Power @1dB compression
In => out1 or 2
out1 or 2 => in
6 to 14GHz
15 to 18GHz
25
Tamb = +25°C
typ.
to
22.5
-6
-7
-15
13
15
35
-1.5 / +2.5
10
12
Conditions
Min
6
0
Max
18
360
Unit
GHz
deg.
deg
dB
dB
dB
dB
dB
dB
dBm
dBm
Parameter
Conditions
state 22.5°
state 45°
state 90°
state 180°
average
22.5°
±
5
45°
±
5
90°
±
5
180°
±
10
std dev
< 3°
< 6°
< 6°
< 6°
pk to pk
±
6° / average
±
10° / average
±
10° / average
±
10° / average
Unit
PPE
Peak Phase Error
deg
Peak Phase Error (PPE) definition:
PPE
(i)
=measured_phase(S21)
(i)
– measured_phase(S21)
(0)
– theoretical_phase
(i)
(i) = state
∈
[0,15]
Amplitude variation (AV) definition:
AV
(i)
= measured_dB(S21)
(i)
– measured_dB(S21)
(0)
(i) = state
∈
[0,15]
Absolute Maximum Ratings
Tamb = +25°C
Operation of this device above anyone of these paramaters may cause permanent damage.
Symbol
Vgi
Pin
Top
Tstg
Parameter
Phase shifter control voltage
Maximum peak input power overdrive (1)
Operating temperature range
Storage temperature range
Values
-7 to +0.6
+30
-40 to +70
-55 to +125
Unit
V
dBm
°C
°C
(1) duration < 1s.
Ref. : DSCHP45116216 - 04 Aug 06
2/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
