CHM2179a
Electrical Characteristics
W-band Mixer
Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical
assembly and RF configuration”
Symbol
F_LO,F_RF
F_IF
Lc
P_LO
VSWR_LO
VSWR_RF
IF_load
I_LO/RF
R_AM_LO
N_IF
Id
Parameter
LO,RF frequency range
IF frequency range
Conversion loss
LO input power
LO port VSWR (50Ω)
RF port VSWR (50Ω)
IF load impedance
LO/RF isolation
LO AM noise rejection
IF noise density @ 100kHz (1)
Supply current (2)
Min
76-77
DC-100
Typ
Max
Unit
GHz
MHz
7.5
3
5
2:1
2:1
200
17
22
27
-158
1
9
7
dB
dBm
Ω
dB
dB
dBm/Hz
mA
(1) Measured on 50Ω IF load impedance.
(2) See on chapter “Typical bias and IF configuration”
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Id
P_LO
P_RF
Top
Tstg
Supply current
Maximum peak input power overdrive at LO port (2)
Maximum peak input power overdrive at RF port (2)
Operating temperature range
Storage temperature range
Parameter
Values
3
10
10
-40 to +100
-55 to +125
Unit
mA
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCH21790192 - 22-Jun-00
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
