80W Power Packaged Transistor
CHK080A-SRA
Typical Performance on Demonstration Board (Ref. 61500192)
Calibration and measurements are done on the connector reference accesses of the
demonstration boards
Tcase = +25°C, Pulsed mode
(1)
Measured Id, Gain, Pout & PAE
F = 3GHz, V
DS
= 50V, I
D_Q
= 600mA
55
10
50
45
40
35
30
25
20
15
10
5
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pulsed mode at 3GHz
Pout
Gain (dB), Pout (dBm) & PAE (%)
9
8
6
PAE
Id
5
4
Gain
3
2
1
0
Input Power (dBm)
Measured Gain, Pout & PAE
Pin = 39dBm, V
DS
= 50V, I
D_Q
= 600mA
60
58
56
54
52
50
48
46
44
42
40
38
36
34
32
30
Pulsed mode
PAE
Gain
2.7
(1)
2.8
2.9
3
3.1
3.2
3.3
3.4
Frequency (GHz)
Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
8/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Gain (dB)
Pout
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
Pout (dBm) & PAE (%)
Drain Current (A)
7
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
