80W Power Packaged Transistor
Maximum Gain & Stability Characteristics
The device is composing by 2 independent transistors.
Each transistor has the following parameters.
CHK080A-SRA
Tcase= +25°C, CW mode, V
DS
=50V, I
D_Q
=600mA (300mA on each transistor)
40
35
30
Maximum Gain
4.0
3.0
Max. Gain (dB)
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
K Factor
0.0
1.0
2.0
Frequency (GHz)
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
6/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
K Factor
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
