80W Power Packaged Transistor
RF Characteristics (Pulsed)
CHK080A-SRA
Tcase= +25°C,
Pulsed mode
(1)
, F=3GHz, V
D
=50V, I
D_Q
=600mA
(I
D_Q
=300mA on each transistor)
Symbol
Parameter
Min
Typ
Max
Unit
G
SS
P
SAT
PAE
G
PAE_MAX
(1)
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
Associated Gain at Max PAE
15
80
55
17
100
65
13
dB
W
%
dB
Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB. The typical performance
achievable in more than 20% frequency band around 3GHz was demonstrated using the
reference board 61500192 presented hereafter.
Absolute Maximum Ratings
Tcase= +25°C
(1), (2), (3)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS_Q
Gate-Source Voltage
I
G_MAX
Maximum Gate Current in forward mode
I
G_MIN
Maximum Gate Current in reverse mode
I
D_MAX
Maximum Drain Current
P
IN
Maximum Input Power (typical)
T
j
Junction Temperature
T
STG
Storage Temperature
T
Case
Case Operating Temperature
(1)
Rating
60
-10, +2
150
-12
12
41
220
-55 to +150
See note
Unit
V
V
mA
mA
A
dBm
°C
°C
°C
Note
(6)
(4)
(5)
(4)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Duration < 1s.
(3)
The given values must not be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4)
Max junction temperature must be considered
(5)
@3GHz - Linked to and limited by I
G_MAX
& I
G_MIN
values
(6)
V
GS_Q
max limited by I
D_MAX
and I
G_MAX
values
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
3/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
