25W Power Packaged Transistor
RF Characteristics (Pulsed)
CHK025A-SOA
Tcase= +25°C,
Pulse mode
(1)
, F = 4GHz, V
DS
=50V, I
D_Q
=200mA
Symbol
Parameter
Min
G
SS
P
SAT
PAE
Small Signal Gain
15
Typ
17
Max
Unit
dB
Saturated Output Power
30
38
W
Max Power Added Efficiency
55
60
%
G
PAE_MAX
Associated Gain at Max PAE
13
dB
(1)
Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and
1µs offset between RF and DC pulse.
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB.
The typical performance achievable in more than 20% frequency band around 4GHz was
demonstrated using the reference board 61500252 presented hereafter.
Absolute Maximum Ratings
(1)
Tcase= +25°C
(1), (2), (3)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS_Q
Gate-Source Voltage
I
G_MAX
Maximum Gate Current in forward mode
I
G_MIN
Maximum Gate Current in reverse mode
I
D_MAX
Maximum Drain Current
P
IN
Maximum Input Power (typical)
T
j
Junction Temperature
T
STG
Storage Temperature
T
Case
Case Operating Temperature
(1)
Rating
60
-10, +2
48
-8
4
37
220
-55 to +150
See note
Unit
V
V
mA
mA
A
dBm
°C
°C
°C
Note
(6)
(4)
(5)
(4)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Duration < 1s.
(3)
The given values must not be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4)
Max junction temperature must be considered
(5)
@4GHz -Linked to and limited by I
G_MAX
& I
G_MIN
values
(6)
V
GS_Q
max limited by I
D_MAX
and I
G_MAX
values
Ref. : DSCHK025ASOA3021 - 21 Jan 13
3/14
Specifications subject to change without notice
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