CHK025A-SOA
25W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK025A-SOA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication.
The CHK025A-SOA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
The CHK025A-SOA is available as a
ceramic-metal
flange
power
package
providing low parasitic and low thermal
resistance.
Main Features
■ Wide band capability: up to 5GHz
■ Pulsed and CW operating modes
■ High power: > 25W
■ High Efficiency: up to 70%
■ DC bias: V
DS
=50V @ I
D_Q
=200mA
■ MTTF > 10
6
hours @ Tj=200°C
■ RoHS Flange Ceramic package
V
DS
= 50V, I
D_Q
= 200mA, Freq=4GHz
Pulsed mode
PAE
Pout
Id
Gain
Intrinsic performances of the packaged device
Main Electrical Characteristics
Tcase= +25°C,
Pulsed mode,
F = 4GHz, V
DS
=50V, I
D_Q
=200mA
Symbol
Parameter
Min
G
SS
P
SAT
PAE
G
PAE_MAX
Small Signal Gain
Saturated Output Power
Max Power Added Efficiency
Associated Gain at Max PAE
1/14
Typ
17
38
60
13
Max
Unit
dB
W
%
dB
15
30
55
Ref. : DSCHK025ASOA3021 - 21 Jan 13
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34