15W Power Packaged Transistor
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
V
DS
Drain to Source Voltage
V
GS_Q
Gate to Source Voltage
I
D_Q
Quiescent Drain Current
I
D_MAX
Drain Current
Gate Current (forward
mode)
T
j_MAX
Junction temperature
(1)
Limited by dissipated power
I
G_MAX
Min
20
Typ
-1.9
0.1
0.65
0
Max
50
0.35
(1)
CHK015A-SMA
Unit
V
V
A
A
mA
°C
Conditions
V
D
= 50V, I
D_Q
= 100mA
V
D
= 50V
V
D
= 50V,
Compressed mode
Compressed mode
8
200
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min
Typ
Max Unit
Conditions
V
P
Pinch-Off Voltage
-3
-2
-1
V
V
D
= 50V, I
D
=I
DSS
/100
I
D_SAT
Saturated Drain Current
2.7
(1)
A
V
D
= 7V, V
G
= 2V
Gate Leakage Current
I
G_leak
-1
mA V
D
= 50V, V
G
= -7V
(reverse mode)
Drain-Source
V
BDS
200
V
V
G
= -7V, I
D
= 20mA
Break-down Voltage
°C/W
R
TH
Thermal Resistance
6.4
(1)
For information, limited by I
D_MAX
, see on Absolute Maximum Ratings
RF Characteristics
Tcase= +25°C,
CW mode,
F = 5.6GHz, V
DS
=50V, I
D_Q
=100mA
Symbol
Parameter
Min
G
SS
Small Signal Gain
13
P
SAT
Saturated Output Power
15
Max Power Added Efficiency
PAE
45
G
PAE_MAX
Associated Gain at Max PAE
Typ
15
18
50
11
Max
-
-
-
-
Unit
dB
W
%
dB
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB.
The typical performance achievable in more than 10% frequency band around 5.5GHz was
demonstrated using the reference board 61499546 presented hereafter.
Ref. : DSCHK015ASMA3021 - 21 Jan 13
2/12
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
