CHK015A-SMA
15W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK015A-SMA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication
The CHK015A-SMA is developed on a
0.5µm gate length GaN HEMT process. It
requires an external matching circuitry.
The CHK015A-SMA is available in a
ceramic-metal
flange
power
package
providing low parasitic and low thermal
resistance.
Main Features
Gain (dB), Pout (dBm) & PAE (%)
V
DS
= 50V, I
D_Q
= 100mA, Freq = 5.6GHz
CW mode
55
35
30
0.7
Id
0.6
25
20
15
10
5
0.5
0.4
Gain
0.3
0.2
0.1
0
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34
0.0
Input Power (dBm)
Intrinsic performances of the packaged device
Main Electrical Characteristics
Tcase= +25°C,
CW mode,
F = 5.6GHz, V
DS
=50V, I
D_Q
=100mA
Symbol
Parameter
Min
G
SS
Small Signal Gain
P
SAT
Saturated Output Power
15
Max Power Added Efficiency
PAE
45
G
PAE_MAX
Associated Gain at Max PAE
Ref. : DSCHK015ASMA3021 - 21 Jan 13
1/12
Typ
15
18
50
11
Max
-
-
-
-
Unit
dB
W
%
dB
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Drain Current (A)
■ Wide band capability: up to 6GHz
■ Pulsed and CW operating modes
■ High power: > 15W
■ High Efficiency: up to 70%
■ DC bias: V
DS
= 50V @ I
D_Q
= 100mA
■ MTTF > 10
6
hours @ Tj = 200°C
■ RoHS Flange Ceramic package
PAE
1.1
50
45
40
1.0
0.9
Pout
0.8