CHE1260-QAG
RoHS COMPLIANT
12-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHE1260-QAG is a bidirectionnal
detector
that
integrates
a
passive
bidirectionnal coupler, two matched detector
diodes and two reference diodes.
It allows the measurement of transmitted and
reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically
commercial
communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is supplied in leadless SMD package.
Vdet_I
DC_I
Vref_I
Vref_R DC_R
Vdet_R
RF_in
RF_out
Main Features
■
Wide frequency range 12-27GHz
Incident power detection (mV)
10000
■
Bidirectionnal detection
■
30dB dynamic range
■
ESD protected
■
16L-QFN3x3 SMD package
Vref_I - Vdet_I (mV)
1000
12GHz
22GHz
100
17GHz
27GHz
10
Main Characteristics
Tamb = +25° VDC = +4.5V (on DC_I and DC_R)
C,
Symbol
F
IL
Dr
Parameter
Frequency range
Insertion Loss
Dynamic Range
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16 18 20
Incident power (dBm)
Min
12
Typ
Max
27
Unit
GHz
dB
dB
1
30
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHE1260-QAG8057 - 22 Feb 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
