CHA7012
Electrical Characteristics
X-band High Power Amplifier
Tamb = 20° Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
C,
Parameter
Min
Typ
Fop
Operating frequency
9.2
G
Small signal gain
17.5
20
G_T
Small signal gain variation versus
-0.025
temperature
RLin
Input Return Loss
8
10
RLout
Output Return Loss
8
12
Psat
Saturated output power
39.5
Psat_T
Saturated output power variation versus
-0.01
temperature
P_3dBc
Output power @ 3dBc (3)
38
38.5
PAE_3dBc
Power Added Efficiency @ 3dBc
34
38
Vc
Power supply voltage (3)
7.5
Ic
Power supply quiescent current (1)
1.9
TI
TTL input voltage
0
I_TI
TTL input current
1
Vctrl
Collector control voltage
5
Zctr
Vctrl input port impedance (2)
350
Top
Operating temperature range
-40
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power
robustness see Maximum ratings)
Symbol
Max
10.4
23
Unit
GHz
dB
dB/°
C
dB
dB
dBm
dB/°
C
dBm
%
V
A
V
mA
V
Ohm
°
C
8
5
+80
(impact on
Absolute Maximum Ratings
(1)
Tamb = 20°
C
Symbol
Cmp
Vc
Ic
Ic_sat
Vctrl
Tj
Tstg
(1)
Parameter
Compression level (2)
Power supply voltage with RF
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature
Storage temperature range
Values
6
8
2.8
3.5
6.5
175
-55 to +125
Unit
dBc
V
A
A
V
°
C
°
C
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vc using the rate 0.5 V / dBc
Equivalent Thermal resistance to Backside: 6°
C/W
Ref. : DSCHA70127235 - 23 Aug 07
2/10
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
